We use the high spatial sensitivity of the anomalous Hall effect in theferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerreffect, to probe the nanoscale elastic flexing behavior of a single magneticdomain wall in a ferromagnetic thin film. Our technique allows positionsensitive characterization of the pinning site density, which we estimate to bearound 10^14 cm^{-3}. Analysis of single site depinning events and theirtemperature dependence yields estimates of pinning site forces (10 pN range) aswell as the thermal deactivation energy. Finally, our data hints at a muchhigher intrinsic domain wall mobility for flexing than previously observed inoptically-probed micron scale measurements.
展开▼
机译：我们使用铁磁半导体Ga1-xMnxAs中异常霍尔效应的高空间灵敏度，并结合磁光Kerreffect，以探测铁磁薄膜中单个磁畴壁的纳米级弹性挠曲行为。我们的技术允许对钉扎位点密度进行位置敏感的表征，我们估计其约为10 ^ 14 cm ^ {-3}。分析单个位点钉扎事件及其温度依赖性可得出钉扎点力（10 pN范围）以及热失活能的估计值。最后，我们的数据表明，与以前观察到的光学探测的微米级测量结果相比，挠性的固有畴壁迁移率要高得多。
展开▼
